Principles and characteristics of a new generation plasma immersion ion implanter

被引:143
作者
Chu, PK
Tang, BY
Cheng, YC
Ko, PK
机构
[1] UNIV HONG KONG,HONG KONG,HONG KONG
[2] HONG KONG UNIV SCI & TECHNOL,SCH ENGN,HONG KONG,HONG KONG
关键词
D O I
10.1063/1.1147959
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
A new generation multipurpose plasma immersion ion implanter (PIII) was custom designed, constructed, and installed in the City University of Hong Kong. The system is designed for general R&D applications in metallurgy, tribology, surface modification, and fabrication of novel materials. Using the new rf ion source in conjunction with the internal antenna system, the plasma density achieves excellent uniformity both laterally and axially. The system also incorporates two metal sources, including four metal are sources and a sputtering electrode, so that multiple metal deposition and implantation steps can be performed in succession in the same equipment without exposing the samples to air. This capability can be critical to the study of surface properties and corrosion resistance. This article describes the design objectives, the novel features, and the characteristics of this new generation PIII equipment. (C) 1997 American Institute of Physics.
引用
收藏
页码:1866 / 1874
页数:9
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