X-ray scattering study on the structural evolution of AlN/sapphire(0001) films during radiofrequency sputter growth

被引：22

作者：

Kang, HC ^{[1
]}

Seo, SH ^{[1
]}

Noh, DY ^{[1
]}

机构：

[1] Kwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

来源：

JOURNAL OF MATERIALS RESEARCH | 2001年 / 16卷 / 06期

基金：

新加坡国家研究基金会;

关键词：

D O I：

10.1557/JMR.2001.0250

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present an x-ray scattering study on the evolution of the growth mode, the surface morphology, and the lattice strain of AIN/sapphire(0001) films during sputter growth. Aligned epitaxial planar layers with strain relaxed to about 2% are nucleated during initial stage growth. As the film thickness increases to an effective "critical" thickness of approximately 250 Angstrom, the growth gradually crosses over to the less aligned island growth. As the growth crossover occurs, the growth front becomes substantially rougher and the residual strain begins to relax. The cogrowth of the planar layer and the islands results in a nonuniform strain distribution.

引用

页码：1814 / 1821

页数：8

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