Optical recombination of ZnO nanowires grown on sapphire and Si substrates

被引：174

作者：

Zhao, QX ^{[1
]}

Willander, M

Morjan, RE

Hu, QH

Campbell, EEB

机构：

[1] Chalmers, Dept Microelect & Nanosci, S-41296 Gothenburg, Sweden

[2] Gothenburg Univ, S-41296 Gothenburg, Sweden

[3] Chalmers, Sch Phys & Engn Phys, Dept Expt Phys, S-41296 Gothenburg, Sweden

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 01期

关键词：

D O I：

10.1063/1.1591069

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZnO nanowires have been grown on sapphire and Si substrates using catalytic growth. A strong near-band-gap ultraviolet emission is observed at room temperature. By carefully studying the temperature dependence of ZnO wire emission, we found that the room-temperature UV emission contains two different transitions; one is related to the ZnO free exciton and the other is related to the free-to-bound transition. The bound state has a binding energy of about 124 meV. The results from optical measurements show that a high quality of ZnO nanowires grown on sapphire and Si substrates has been achieved. (C) 2003 American Institute of Physics.

引用

页码：165 / 167

页数：3

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