Size dependence of III-nitride microdisk light-emitting diode characteristics

被引：55

作者：

Jin, SX ^{[1
]}

Shakya, J ^{[1
]}

Lin, JY ^{[1
]}

Jiang, HX ^{[1
]}

机构：

[1] Kansas State Univ, Dept Phys, Manhattan, KS 66506 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 22期

关键词：

D O I：

10.1063/1.1376152

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Individual microdisk blue-light-emitting diodes (mu -LEDs) of varying diameters from 5 to 20 mum have been fabricated from InGaN/GaN quantum wells. Size effects on the mu -LED characteristics, including I-V and L-I characteristics, have been measured. The transient behavior of the mu -LEDs has also been studied. It was found that the turn-on time is on the order of our system response (30 ps) and the turn-off time is on the order of 0.2 ns and shows a strong size dependence. The ability of two-dimensional array integration with advantages of high speed, high resolution, low temperature sensitivity, and applicability under versatile conditions make III-nitride mu -LEDs a potential candidate for light sources in short-distance optical communications. (C) 2001 American Institute of Physics.

引用

页码：3532 / 3534

页数：3

共 9 条

[1]

CHANG RK, 1996, OPTICAL PROCESSES MI

[2] III-nitride blue microdisplays [J].