Interfacial electrical properties of POxNyInz/n-InP

被引：1

作者：

Hbib, H

Quan, DT

Bonnaud, O

Menkassi, A

机构：

[1] Grp. Microlectron.,/Visulaisation, URA CNRS 1648, Campus de Beaulieu

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1996年 / 155卷 / 02期

关键词：

D O I：

10.1002/pssa.2211550231

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：K5 / K7

页数：3

共 7 条

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