All-Inkjet-Printed Organic Thin-Film Transistors with Silver Gate, Source/Drain Electrodes

被引：48

作者：

Chung, Seungjun ^{[1
]}

Jang, Jongsu ^{[1
]}

Cho, Junhee ^{[1
]}

Lee, Changhee ^{[1
]}

Kwon, Soon-Ki ^{[2
,3
]}

Hong, Yongtaek ^{[1
]}

机构：

[1] Seoul Natl Univ, Dept Elect Engn & Comp Sci, Seoul 151744, South Korea

[2] Gyeongsang Natl Univ, Sch Mat Sci & Engn, Jinju 660701, South Korea

[3] Gyeongsang Natl Univ, ERI, Jinju 660701, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 03期

关键词：

PENTACENE; CIRCUITS;

D O I：

10.1143/JJAP.50.03CB05

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report high-performance all-inkjet-printed organic thin-film transistors (OTFTs), where inkjet-printed silver electrodes, cross-linked poly(4-vinylphenol) (PVP) and 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) were used as gate/source/drain electrodes, a gate dielectric layer and an active semiconductor layer, respectively. To evaluate quality of the active semiconductor layer, we also fabricated OTFTs by using spin-coating and drop-casting methods for TIPS-pentacene layer on the inkjet-printed PVP gate dielectric layer. Comparable TFT electrical performances were obtained and well-crystallized TIPS-pentacene layer was formed for all cases. All TIPS-pentacene OTFTs show lower sub-threshold swing values than OTFTs with an evaporated pentacene active semiconductor layer on the inkjet-printed PVP gate dielectric layer. By using optimized inkjet-printing conditions, we obtained mobility of 0.06 cm(2) V-1 s(-1) and on/off ratio of 104 for all-inkjet-printed OTFT. (c) 2011 The Japan Society of Applied Physics

引用

页数：5

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