The solvent from which the active layer is drop cast dramatically influences the electrical characteristics and electrical stability of thin-film transistors comprising bis (triisopropylsilylethynyl) pentacene. Casting from high boiling solvents allows slower crystallization; devices cast from toluene and chlorobenzene thus exhibit mobilities >0.1 cm2/V s and on/off ratios of similar to 10(6). More importantly, the solvent choice influences the device stability. Devices from toluene exhibit stable characteristics, whereas devices from chlorobenzene show hystereses on cycling, with dramatic threshold voltage shifts toward positive voltages. The instability in chlorobenzene devices is attributed to the migration of water and solvent impurities to the charge transport interface on repetitive testing. (c) 2008 American Institute of Physics.
机构:
NIST, Div Semicond Elect, Elect & Elect Engn Lab, Gaithersburg, MD 20899 USANIST, Div Semicond Elect, Elect & Elect Engn Lab, Gaithersburg, MD 20899 USA
Gundlach, D. J.
;
Royer, J. E.
论文数: 0引用数: 0
h-index: 0
机构:
NIST, Div Semicond Elect, Elect & Elect Engn Lab, Gaithersburg, MD 20899 USANIST, Div Semicond Elect, Elect & Elect Engn Lab, Gaithersburg, MD 20899 USA
Royer, J. E.
;
Park, S. K.
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h-index: 0
机构:
Penn State Univ, Dept Elect Engn, University Pk, PA 16802 USANIST, Div Semicond Elect, Elect & Elect Engn Lab, Gaithersburg, MD 20899 USA
Park, S. K.
;
Subramanian, S.
论文数: 0引用数: 0
h-index: 0
机构:
Univ Kentucky, Dept Chem, Lexington, KY 40506 USANIST, Div Semicond Elect, Elect & Elect Engn Lab, Gaithersburg, MD 20899 USA
Subramanian, S.
;
Jurchescu, O. D.
论文数: 0引用数: 0
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机构:
NIST, Div Semicond Elect, Elect & Elect Engn Lab, Gaithersburg, MD 20899 USA
Penn State Univ, Dept Elect Engn, University Pk, PA 16802 USANIST, Div Semicond Elect, Elect & Elect Engn Lab, Gaithersburg, MD 20899 USA
Jurchescu, O. D.
;
Hamadani, B. H.
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h-index: 0
机构:
NIST, Div Semicond Elect, Elect & Elect Engn Lab, Gaithersburg, MD 20899 USANIST, Div Semicond Elect, Elect & Elect Engn Lab, Gaithersburg, MD 20899 USA
机构:
NS60 Seoul Natl Univ, Sch Chem, Mol Elect & NanoStructures Lab, Seoul 151747, South KoreaNS60 Seoul Natl Univ, Sch Chem, Mol Elect & NanoStructures Lab, Seoul 151747, South Korea
Hong, Jung-Pyo
;
Park, Aee-Young
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h-index: 0
机构:
NS60 Seoul Natl Univ, Sch Chem, Mol Elect & NanoStructures Lab, Seoul 151747, South KoreaNS60 Seoul Natl Univ, Sch Chem, Mol Elect & NanoStructures Lab, Seoul 151747, South Korea
Park, Aee-Young
;
Lee, Seonghoon
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NS60 Seoul Natl Univ, Sch Chem, Mol Elect & NanoStructures Lab, Seoul 151747, South KoreaNS60 Seoul Natl Univ, Sch Chem, Mol Elect & NanoStructures Lab, Seoul 151747, South Korea
Lee, Seonghoon
;
Kang, Jihoon
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机构:
NS60 Seoul Natl Univ, Sch Chem, Polymer Sci Lab, Seoul 151747, South KoreaNS60 Seoul Natl Univ, Sch Chem, Mol Elect & NanoStructures Lab, Seoul 151747, South Korea
Kang, Jihoon
;
Shin, Nayool
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机构:
NS60 Seoul Natl Univ, Sch Chem, Polymer Sci Lab, Seoul 151747, South KoreaNS60 Seoul Natl Univ, Sch Chem, Mol Elect & NanoStructures Lab, Seoul 151747, South Korea
Shin, Nayool
;
Yoon, Do Y.
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机构:
NS60 Seoul Natl Univ, Sch Chem, Polymer Sci Lab, Seoul 151747, South KoreaNS60 Seoul Natl Univ, Sch Chem, Mol Elect & NanoStructures Lab, Seoul 151747, South Korea
机构:
NIST, Div Semicond Elect, Elect & Elect Engn Lab, Gaithersburg, MD 20899 USANIST, Div Semicond Elect, Elect & Elect Engn Lab, Gaithersburg, MD 20899 USA
Gundlach, D. J.
;
Royer, J. E.
论文数: 0引用数: 0
h-index: 0
机构:
NIST, Div Semicond Elect, Elect & Elect Engn Lab, Gaithersburg, MD 20899 USANIST, Div Semicond Elect, Elect & Elect Engn Lab, Gaithersburg, MD 20899 USA
Royer, J. E.
;
Park, S. K.
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h-index: 0
机构:
Penn State Univ, Dept Elect Engn, University Pk, PA 16802 USANIST, Div Semicond Elect, Elect & Elect Engn Lab, Gaithersburg, MD 20899 USA
Park, S. K.
;
Subramanian, S.
论文数: 0引用数: 0
h-index: 0
机构:
Univ Kentucky, Dept Chem, Lexington, KY 40506 USANIST, Div Semicond Elect, Elect & Elect Engn Lab, Gaithersburg, MD 20899 USA
Subramanian, S.
;
Jurchescu, O. D.
论文数: 0引用数: 0
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机构:
NIST, Div Semicond Elect, Elect & Elect Engn Lab, Gaithersburg, MD 20899 USA
Penn State Univ, Dept Elect Engn, University Pk, PA 16802 USANIST, Div Semicond Elect, Elect & Elect Engn Lab, Gaithersburg, MD 20899 USA
Jurchescu, O. D.
;
Hamadani, B. H.
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h-index: 0
机构:
NIST, Div Semicond Elect, Elect & Elect Engn Lab, Gaithersburg, MD 20899 USANIST, Div Semicond Elect, Elect & Elect Engn Lab, Gaithersburg, MD 20899 USA
机构:
NS60 Seoul Natl Univ, Sch Chem, Mol Elect & NanoStructures Lab, Seoul 151747, South KoreaNS60 Seoul Natl Univ, Sch Chem, Mol Elect & NanoStructures Lab, Seoul 151747, South Korea
Hong, Jung-Pyo
;
Park, Aee-Young
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h-index: 0
机构:
NS60 Seoul Natl Univ, Sch Chem, Mol Elect & NanoStructures Lab, Seoul 151747, South KoreaNS60 Seoul Natl Univ, Sch Chem, Mol Elect & NanoStructures Lab, Seoul 151747, South Korea
Park, Aee-Young
;
Lee, Seonghoon
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h-index: 0
机构:
NS60 Seoul Natl Univ, Sch Chem, Mol Elect & NanoStructures Lab, Seoul 151747, South KoreaNS60 Seoul Natl Univ, Sch Chem, Mol Elect & NanoStructures Lab, Seoul 151747, South Korea
Lee, Seonghoon
;
Kang, Jihoon
论文数: 0引用数: 0
h-index: 0
机构:
NS60 Seoul Natl Univ, Sch Chem, Polymer Sci Lab, Seoul 151747, South KoreaNS60 Seoul Natl Univ, Sch Chem, Mol Elect & NanoStructures Lab, Seoul 151747, South Korea
Kang, Jihoon
;
Shin, Nayool
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h-index: 0
机构:
NS60 Seoul Natl Univ, Sch Chem, Polymer Sci Lab, Seoul 151747, South KoreaNS60 Seoul Natl Univ, Sch Chem, Mol Elect & NanoStructures Lab, Seoul 151747, South Korea
Shin, Nayool
;
Yoon, Do Y.
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h-index: 0
机构:
NS60 Seoul Natl Univ, Sch Chem, Polymer Sci Lab, Seoul 151747, South KoreaNS60 Seoul Natl Univ, Sch Chem, Mol Elect & NanoStructures Lab, Seoul 151747, South Korea