Angular-dependent photoemission studies of indium tin oxide surfaces

被引：53

作者：

Song, W

So, SK ^{[1
]}

Cao, L

机构：

[1] Hong Kong Baptist Univ, Dept Phys, Kowloon, Hong Kong, Peoples R China

[2] Hong Kong Baptist Univ, Ctr Surface Anal & Res, Kowloon, Hong Kong, Peoples R China

[3] Tsinghua Univ, Dept Chem, Beijing 100084, Peoples R China

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2001年 / 72卷 / 03期

关键词：

D O I：

10.1007/s003390000534

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Indium tin oxide (ITO) surfaces were treated by solvent cleaning, by plasma of oxygen, argon, nitrogen and by argon ion (Art) sputtering. Angular-dependent X-ray photoelectron spectroscopy (ADXPS) and ultraviolet photoelectron spectroscopy (UPS) were used to determine the chemical composition, the chemical states and the work function after each treatment. It was found that oxygen plasma and nitrogen plasma chemically reacted with the ITO surfaces. Yet little etching of the surface can be observed after plasma treatments. Among all treatments, oxygen-plasma-treated ITO achieved the highest work function of 3.90 eV, whereas Ar+-sputtered ITO surface had the lowest work function of 3.90 eV. The stoichiometry of the ITO surface is shown to be the major controlling factor of the ITO work function.

引用

页码：361 / 365

页数：5

共 17 条

[1] PROPERTIES OF SN-DOPED IN2O3 FILMS PREPARED BY RF SPUTTERING
FAN, JCC
BACHNER, FJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) : 1719 - 1725
[2] X-RAY PHOTOEMISSION SPECTROSCOPY STUDIES OF SN-DOPED INDIUM-OXIDE FILMS
FAN, JCC
GOODENOUGH, JB
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3524 - 3531
[3] An organic electroluminescent dot-matrix display using carbon underlayer
Gyoutoku, A
Hara, S
Komatsu, T
Shirinashihama, M
Iwanaga, H
Sakanoue, K
[J]. SYNTHETIC METALS, 1997, 91 (1-3) : 73 - 75
[4] A study of the ITO-on-PPV interface using photoelectron spectroscopy
Johansson, N
Cacialli, F
Xing, KZ
Beamson, G
Clark, DT
Friend, RH
Salaneck, WR
[J]. SYNTHETIC METALS, 1998, 92 (03) : 207 - 211
[5] PROBING DEPTH IN PHOTOEMISSION AND AUGER-ELECTRON SPECTROSCOPY
LINDAU, I
SPICER, WE
[J]. JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1974, 3 (05) : 409 - 413
[6] Characterization of treated indium-tin-oxide surfaces used in electroluminescent devices
Mason, MG
Hung, LS
Tang, CW
Lee, ST
Wong, KW
Wang, M
[J]. JOURNAL OF APPLIED PHYSICS, 1999, 86 (03) : 1688 - 1692
[7] Nüesch F, 1999, APPL PHYS LETT, V74, P880, DOI 10.1063/1.123397
[8] Work function of indium tin oxide transparent conductor measured by photoelectron spectroscopy
Park, Y
Choong, V
Gao, Y
Hsieh, BR
Tang, CW
[J]. APPLIED PHYSICS LETTERS, 1996, 68 (19) : 2699 - 2701
[9] CARRIER TUNNELING AND DEVICE CHARACTERISTICS IN POLYMER LIGHT-EMITTING-DIODES
PARKER, ID
[J]. JOURNAL OF APPLIED PHYSICS, 1994, 75 (03) : 1656 - 1666
[10] ATTENUATION LENGTHS OF LOW-ENERGY ELECTRONS IN SOLIDS
POWELL, CJ
[J]. SURFACE SCIENCE, 1974, 44 (01) : 29 - 46

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