Direct measurements of frequency response of carbon nanotube field effect transistors

被引:16
作者
Singh, DV [1 ]
Jenkins, KA [1 ]
Appenzeller, J [1 ]
机构
[1] IBM Corp, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA
关键词
D O I
10.1049/el:20057528
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The frequency response of a carbon nanotube field effect transistor (CNFET) biased in the common-source and common-gate configurations has been measured up to 200 MHz for the first time using a direct measurement technique. In this frequency range there is no observed degradation in the measured AC response of the CNFET. The effect of parasitic capacitance on the measurement has been identified and based on a simple model; it is estimated that this approach can be extended well into the gigahertz range. This is the only demonstrated method of directly characterising the frequency response of nanoscale devices where the signal levels are below the noise floor of conventional network analysers.
引用
收藏
页码:280 / 282
页数:3
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