Frequency kesponse of top-gated carbon nanotube field-effect transistors

被引：43

作者：

Singh, DV ^{[1
]}

Jenkins, KA ^{[1
]}

Appenzeller, J ^{[1
]}

Neumayer, D ^{[1
]}

Grill, A ^{[1
]}

Wong, HSP ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2004年 / 3卷 / 03期

关键词：

AC measurement; carbon nanotube (CN); high frequency;

D O I：

10.1109/TNANO.2004.828577

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The ac performance of carbon nanotube field-effect transistors (CNFETs) has been characterized using two approaches involving: 1) time- and 2) frequency-domain measurements. A high input impedance measurement system was used to demonstrate time-domain switching of CNFETs at frequencies up to 100 kHz. The low level of signal crosstalk in CNFETs fabricated on quartz substrates enabled frequency-domain measurements of the ac response of CNFETs in the megahertz range, over five orders of magnitude higher in frequency than previously reported ac measurements of CNFET devices.

引用

页码：383 / 387

页数：5

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