Characteristics of In0.425Al0.575As-InxGa1-x as metamorphic HEMTs with pseudomorphic and symmetrically graded channels

被引：32

作者：

Hsu, WC ^{[1
]}

Chen, YJ

Lee, CS

Wang, TB

Huang, JC

Huang, DH

Su, KH

Lin, YS

Wu, CL

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan

[2] Feng Chia Univ, Dept Elect Engn, Taichung 40724, Taiwan

[3] Natl Dong Hwa Univ, Dept Mat Sci & Engn, Hualien, Taiwan

[4] Transcom Inc, Tainan 744, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2005年 / 52卷 / 06期

关键词：

MHEMT; PC-MHRMT; SGC-MHEMT; V-shaped symmetrically graded channel; small-signal model;

D O I：

10.1109/TED.2005.848863

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In0.425Al0.575As-In(x)Gal(1-x)As metamorphic high electron mobility transistors (MHEMTs) with two different channel designs, grown by molecular beam epitaxy (MBE) system, have been successfully investigated. Comprehensive dc and high-frequency characteristics, including the extrinsic transconductance, current driving capability, device linearity, pinch-off property, gate-voltage swing, breakdown performance, unity-gain cutoff frequency, max. oscillation frequency, output power, and power gain, etc., have been characterized and compared. In addition, complete parametric information of the small-signal device model has also been extracted and discussed for the pseudomorphic channel MHEMT (PC-MHEMT) and the V-shaped symmetrically graded channel MHEMT (SGC-MHEMT), respectively.

引用

页码：1079 / 1086

页数：8

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