Air-stable, non-volatile resistive memory based on hybrid organic/inorganic nanocomposites

被引：47

作者：

Casula, Giulia ^{[1
]}

Cosseddu, Piero ^{[2
]}

Busby, Yan ^{[3
]}

Pireaux, Jean-Jacques ^{[3
]}

Rosowski, Marcin ^{[4
]}

Szczesna, Beata Tkacz ^{[4
]}

Soliwoda, Katarzyna ^{[4
]}

Celichowski, Grzegorz ^{[4
]}

Grobelny, Jaroslaw ^{[4
]}

Novak, Jiri ^{[5
,6
]}

Banerjee, Rupak ^{[6
]}

Schreiber, Frank ^{[6
]}

Bonfiglio, Annalisa ^{[1
]}

机构：

[1] Univ Cagliari, Dept Elect & Elect Engn, I-09123 Cagliari, Italy

[2] CNR, Inst Nanosci, Ctr S3, I-41100 Modena, Italy

[3] Univ Namur, Res Ctr Phys Matter & Radiat PMR, Lab Interdisciplinaire Spect Elect, B-5000 Namur, Belgium

[4] Univ Lodz, Dept Chem & Mat Technol, PL-90236 Lodz, Poland

[5] Masaryk Univ, Cent European Inst Technol, CZ-62500 Brno, Czech Republic

[6] Univ Tubingen, Inst Appl Phys, D-72076 Tubingen, Germany

来源：

ORGANIC ELECTRONICS | 2015年 / 18卷

关键词：

Organic memories; Resistive switching; Metal nanoparticles; Filamentary conduction; THIN-FILM; ELECTRICAL BISTABILITY; BISTABLE DEVICES; POLYMER; TRANSISTORS; NANOPARTICLES;

D O I：

10.1016/j.orgel.2015.01.001

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A non-volatile memory element based on organic/inorganic nanocomposites is presented. The device can be operated in ambient conditions, showing high retention time and long-term life time. The formation/rupture of metallic filaments in the organic matrix is investigated by HR-XPS and ToF-SIMS analysis, and is demonstrated to be the driving mechanism for the resistive switching. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：17 / 23

页数：7

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