Organic Resistive Memory Devices: Performance Enhancement, Integration, and Advanced Architectures

被引:435
作者
Cho, Byungjin [1 ]
Song, Sunghun [1 ]
Ji, Yongsung [1 ]
Kim, Tae-Wook [2 ]
Lee, Takhee [1 ]
机构
[1] Gwangju Inst Sci & Technol, Sch Mat Sci & Engn, Dept Nanobio Mat & Elect, Kwangju 500712, South Korea
[2] Korea Inst Sci & Technol, Inst Adv Composite Mat, Jeollabuk Do 565902, South Korea
关键词
NEGATIVE-DIFFERENTIAL-RESISTANCE; NONVOLATILE MEMORY; THIN-FILM; ELECTRICAL BISTABILITY; BISTABLE MEMORY; MULTILEVEL CONDUCTANCE; DATA-STORAGE; POLYMER; MECHANISM; DIODE;
D O I
10.1002/adfm.201100686
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
In recent years, organic resistive memory devices in which active organic materials possess at least two stable resistance states have been extensively investigated for their promising memory potential. From the perspective of device fabrication, their advantages include simple device structures, low fabrication costs, and printability. Furthermore, their exceptional electrical performances such as a nondestructive reading process, nonvolatility, a high ON/OFF ratio, and a fast switching speed meet the requirements for viable memory technologies. Full understanding of the underlying physics behind the interesting phenomena is still challenging. However, many studies have provided useful insights into scientific and technical issues surrounding organic resistive memory. This Feature Article begins with a summary on general characteristics of the materials, device structures, and switching mechanisms used in organic resistive devices. Strategies for performance enhancement, integration, and advanced architectures in these devices are also presented, which may open a way toward practically applicable organic memory devices.
引用
收藏
页码:2806 / 2829
页数:24
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