Comparison of the carrier induced refractive index, gain, and linewidth enhancement factor in quantum dot and quantum well lasers

被引：94

作者：

Ukhanov, AA ^{[1
]}

Stintz, A ^{[1
]}

Eliseev, PG ^{[1
]}

Malloy, KJ ^{[1
]}

机构：

[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 07期

关键词：

D O I：

10.1063/1.1647688

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The spectral dependence of the modal gain and linewidth enhancement factor is measured in an InAs/GaInAs/AlGaAs/GaAs quantum dot (QD) laser and a GaInAs/AlGaAs/GaAs quantum well laser of the same design lacking only the quantum dots. The material differential gain and material differential carrier induced refractive index are found to be about three times smaller in the quantum dot laser than in the quantum well laser. The linewidth enhancement factor is smaller in the QD laser and exhibits considerably less dispersion. (C) 2004 American Institute of Physics.

引用

页码：1058 / 1060

页数：3

共 18 条

[1] Optical transitions and carrier relaxation in self assembled InAs/GaAs quantum dots [J].

Adler, F ;

Geiger, M ;

Bauknecht, A ;

Scholz, F ;

Schweizer, H ;

Pilkuhn, MH ;

Ohnesorge, B ;

Forchel, A .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (07) :4019-4026

[2] GAIN AND THE THRESHOLD OF 3-DIMENSIONAL QUANTUM-BOX LASERS [J].

ASADA, M ;

MIYAMOTO, Y ;

SUEMATSU, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1915-1921

[3] InGaAs-GaAs quantum-dot lasers [J].

Bimberg, D ;

Kirstaedter, N ;

Ledentsov, NN ;

Alferov, ZI ;

Kopev, PS ;

Ustinov, VM .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (02) :196-205

[4] Gain, refractive index, and alpha-parameter in InGaAs-GaAs SQW broad-area lasers [J].

Bossert, DJ ;

Gallant, D .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1996, 8 (03) :322-324

[5]

Coldren L., 1995, Diode lasers and photonic integrated circuits

[6] Transition dipole moment of InAs/InGaAs quantum dots from experiments on ultralow-threshold laser diodes [J].

Eliseev, PG ;

Li, H ;

Stintz, A ;

Liu, GT ;

Newell, TC ;

Malloy, KJ ;

Lester, LF .

APPLIED PHYSICS LETTERS, 2000, 77 (02) :262-264

[7] Spontaneous lifetime control in a native-oxide-apertured microcavity [J].

Graham, LA ;

Huffaker, DL ;

Deppe, DG .

APPLIED PHYSICS LETTERS, 1999, 74 (17) :2408-2410

[8] CW DEGRADATION AT 300 DEGREES K OF GAAS DOUBLE-HETEROSTRUCTURE JUNCTION LASERS .2. ELECTRONIC GAIN [J].

HAKKI, BW ;

PAOLI, TL .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) :4113-4119

[9]

LI H, 2000, P LEOS ANN M

[10] Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well [J].

Liu, GT ;

Stintz, A ;

Li, H ;

Malloy, KJ ;

Lester, LF .

ELECTRONICS LETTERS, 1999, 35 (14) :1163-1165

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