Pulsed-laser deposition of Si nanoclusters

被引：36

作者：

Vijayalakshmi, S ^{[1
]}

George, MA

Sturmann, J

Grebel, H

机构：

[1] New Jersey Inst Technol, Opt Waveguide Lab, Newark, NJ 07102 USA

[2] Univ Alabama, Huntsville, AL 35899 USA

[3] Vanderbilt Univ, Nashville, TN 37235 USA

来源：

APPLIED SURFACE SCIENCE | 1998年 / 127卷

关键词：

pulsed-laser deposition; Si nanoclusters; nonlinear optical properties;

D O I：

10.1016/S0169-4332(97)00659-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Growth properties of thin films of Si nanoclusters that were deposited on Si wafers by use of pulsed-laser ablation are discussed. The films were characterized by Atomic Force Microscopy (AFM) and X-ray Diffraction (XRD) and FTIR spectroscopy. Large nonlinear optical absorption was measured using a Free-Electron Laser at wavelengths near the infrared absorption band centered at 9.8 mu m. (C) 1998 Elsevier Science B.V.

引用

页码：378 / 382

页数：5

共 14 条

[1] THE VANDERBILT-UNIVERSITY FREE-ELECTRON LASER CENTER [J].

BRAU, CA .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1992, 318 (1-3) :38-41

[2] DEPOSITION AND ANALYSIS OF SILICON CLUSTERS GENERATED BY LASER-INDUCED GAS-PHASE REACTION [J].

EHBRECHT, M ;

FERKEL, H ;

HUISKEN, F ;

HOLZ, L ;

POLIVANOV, YN ;

SMIRNOV, VV ;

STELMAKH, OM ;

SCHMIDT, R .

JOURNAL OF APPLIED PHYSICS, 1995, 78 (09) :5302-5306

[3]

Ferraro J., 1990, PRACTICAL FOURIER TR

[4] 3RD-ORDER OPTICAL NONLINEARITY AND ALL-OPTICAL SWITCHING IN POROUS SILICON [J].

HENARI, FZ ;

MORGENSTERN, K ;

BLAU, WJ ;

KARAVANSKII, VA ;

DNEPROVSKII, VS .

APPLIED PHYSICS LETTERS, 1995, 67 (03) :323-325

[5] 3RD-ORDER NONLINEAR-OPTICAL SUSCEPTIBILITY AND PHOTOLUMINESCENCE IN POROUS SILICON [J].

KANEMITSU, Y ;

OKAMOTO, S ;

MITO, A .

PHYSICAL REVIEW B, 1995, 52 (15) :10752-10755

[6] Dynamics of silicon plume generated by laser ablation and its chemical reaction [J].

Makimura, T ;

Murakami, K .

APPLIED SURFACE SCIENCE, 1996, 96-8 :242-250

[7] Raman study of the relationship between nanoparticles and photoluminescence in spark-processed silicon [J].

Rupp, S ;

Quilty, J ;

Trodahl, HJ ;

Ludwig, MH ;

Hummel, RE .

APPLIED PHYSICS LETTERS, 1997, 70 (06) :723-725

[8] SENSITIVE MEASUREMENT OF OPTICAL NONLINEARITIES USING A SINGLE BEAM [J].

SHEIKBAHAE, M ;

SAID, AA ;

WEI, TH ;

HAGAN, DJ ;

VANSTRYLAND, EW .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1990, 26 (04) :760-769

[9] PULSED-LASER EVAPORATION TECHNIQUE FOR DEPOSITION OF THIN-FILMS - PHYSICS AND THEORETICAL-MODEL [J].

SINGH, RK ;

NARAYAN, J .

PHYSICAL REVIEW B, 1990, 41 (13) :8843-8859

[10] CLUSTERS FORMED IN LASER-INDUCED ABLATION OF SI, SIC, PT, UO2 AND EVAPORATION OF UO2 OBSERVED BY LASER IONIZATION TIME-OF-FLIGHT MASS-SPECTROMETRY AND SCANNING TUNNELING MICROSCOPY [J].

TENCH, RJ ;

BALOOCH, M ;

BERNARDEZ, L ;

ALLEN, MJ ;

SIEKHAUS, WJ ;

OLANDER, DR ;

WANG, W .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (02) :820-824

← 1 2 →