3RD-ORDER OPTICAL NONLINEARITY AND ALL-OPTICAL SWITCHING IN POROUS SILICON

被引：105

作者：

HENARI, FZ ^{[1
]}

MORGENSTERN, K ^{[1
]}

BLAU, WJ ^{[1
]}

KARAVANSKII, VA ^{[1
]}

DNEPROVSKII, VS ^{[1
]}

机构：

[1] MOSCOW MV LOMONOSOV STATE UNIV,DEPT SEMICOND PHYS,MOSCOW 119899,RUSSIA

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 03期

关键词：

D O I：

10.1063/1.115432

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The third-order optical nonlinearity ((3)(chi)) of porous silicon has been measured using the Z-scan technique. Intensity dependent absorption was observed and attributed to a resonant two photon absorption process. The real and imaginary parts of ((3)(chi)) have been measured at 665 nm and found to be 7.5x10(-9) esu and -1.9x10(-9) esu, respectively. This constitutes a significant esu enhancement over crystalline silicon, All optical switching based on nonlinear absorption is demonstrated. (C) 1995 American Institute of Physics.

引用

页码：323 / 325

页数：3

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