Submilliwatt optical bistability in wafer fused vertical cavity at 1.55-mu m wavelength

被引：10

作者：

Jeannes, F ^{[1
]}

Patriarche, G ^{[1
]}

Azoulay, R ^{[1
]}

Ougazzaden, A ^{[1
]}

Landreau, J ^{[1
]}

Oudar, JL ^{[1
]}

机构：

[1] INST MAT NANTES,F-44072 NANTES,FRANCE

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1996年 / 8卷 / 04期

关键词：

D O I：

10.1109/68.491219

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on low-power optical bistability in a vertical cavity structure at 1.55-mu m wavelength due to the bandgap resonant dispersive optical nonlinearity of InGaAsP, In this structure, a GaAs-AlAs Bragg reflector grown on GaAs and the nonlinear medium grown on InP are bonded through waferfusion, leading to a high-quality vertical cavity after deposition of a top dielectric mirror. This device shows interesting characteristics for optical switching applications at fiber communication wavelengths, such as a switching contrast higher than 8:1 in the reflective mode and a bistability threshold power as low as 0.6 mW. True steady-state memory effect is observed with continuous-wave input, and the device switching time is in the ns range.

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收藏

页码：539 / 541

页数：3

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