Electrical characteristics of a metal-insulator-semiconductor memory structure containing Ge nanocrystals

被引：12

作者：

Heng, CL ^{[1
]}

Finstad, TG ^{[1
]}

机构：

[1] Univ Oslo, Dept Phys, N-0316 Oslo, Norway

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2005年 / 26卷 / 1-4期

关键词：

memory effects; Ge nanocrystals; C-V measurement; Si/SiO2 interface states;

D O I：

10.1016/j.physe.2004.08.006

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A metal-insulator-semiconductor structure device with Ge nanocrystals in SiO2 was synthesized and the electrical characteristics were investigated. Capacitance-voltage (C-V) curves show hysteresis and the measurements indicate that the device has charge storage effects and stores more holes than electrons. For decreasing measurement frequencies from 1 MHz to 500 Hz, both branches of the C-V hysteresis shift in the positive voltage direction. The slope of the left flank of the C-V hysteresis curve becomes stretched out with decreasing frequency. The slope of the right one appears frequency independent, while there is a small hump/step on the right flank of the C-V hysteresis curve for the lower frequency cases (500 Hz and 1 kHz). The role of Si/SiO2 interface states is discussed. (C) 2004 Elsevier B.V. All rights reserved.

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页码：386 / 390

页数：5

相关论文

共 16 条

[1] Observation of memory effect in germanium nanocrystals embedded in an amorphous silicon oxide matrix of a metal-insulator-semiconductor structure [J].

Choi, WK ;

Chim, WK ;

Heng, CL ;

Teo, LW ;

Ho, V ;

Ng, V ;

Antoniadis, DA ;

Fitzgerald, EA .

APPLIED PHYSICS LETTERS, 2002, 80 (11) :2014-2016

[2] The effect of additional oxidation on the memory characteristics of metal-oxide-semiconductor capacitors with Si nanocrystals [J].

Garrido, B ;

Cheylan, S ;

González-Varona, O ;

Pérez-Rodríguez, A ;

Morante, JR .

APPLIED PHYSICS LETTERS, 2003, 82 (26) :4818-4820

[3] The formation of Ge nanocrystals in a metal-insulator-semiconductor structure and its memory effect [J].

Heng, CL ;

Liu, YJ ;

Wee, ATS ;

Finstad, TG .

JOURNAL OF CRYSTAL GROWTH, 2004, 262 (1-4) :95-104

[4] A SINGLE-FREQUENCY APPROXIMATION FOR INTERFACE-STATE DENSITY DETERMINATION [J].

HILL, WA ;

COLEMAN, CC .

SOLID-STATE ELECTRONICS, 1980, 23 (09) :987-993

[5] Emission lifetime of polarizable charge stored in nano-crystalline Si based single-electron memory [J].

Hinds, BJ ;

Yamanaka, T ;

Oda, S .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (12) :6402-6408

[6] Electron trapping, storing, and emission in nanocrystalline Si dots by capacitance-voltage and conductance-voltage measurements [J].

Huang, SY ;

Banerjee, S ;

Tung, RT ;

Oda, S .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (01) :576-581

[7] Structural and electrical properties of silicon dioxide layers with embedded germanium nanocrystals grown by molecular beam epitaxy [J].

Kanjilal, A ;

Hansen, JL ;

Gaiduk, P ;

Larsen, AN ;

Cherkashin, N ;

Claverie, A ;

Normand, P ;

Kapelanakis, E ;

Skarlatos, D ;

Tsoukalas, D .

APPLIED PHYSICS LETTERS, 2003, 82 (08) :1212-1214

[8] Charge storage and interface states effects in Si-nanocrystal memory obtained using low-energy Si+ implantation and annealing [J].

Kapetanakis, E ;

Normand, P ;

Tsoukalas, D ;

Beltsios, K ;

Stoemenos, J ;

Zhang, S ;

van den Berg, J .

APPLIED PHYSICS LETTERS, 2000, 77 (21) :3450-3452

[9] Rapid-thermal-annealing effect on lateral charge loss in metal-oxide-semiconductor capacitors with Ge nanocrystals [J].

Kim, JK ;

Cheong, HJ ;

Kim, Y ;

Yi, JY ;

Bark, HJ ;

Bang, SH ;

Cho, JH .

APPLIED PHYSICS LETTERS, 2003, 82 (15) :2527-2529

[10] Ultralarge capacitance-voltage hysteresis and charge retention characteristics in metal oxide semiconductor structure containing nanocrystals deposited by ion-beam-assisted electron beam deposition [J].

Kim, Y ;

Park, KH ;

Chung, TH ;

Bark, HJ ;

Yi, JY ;

Choi, WC ;

Kim, EK ;

Lee, JW ;

Lee, JY .

APPLIED PHYSICS LETTERS, 2001, 78 (07) :934-936