Si 2p XPS spectrum of the hydrogen-terminated (100) surface of device-quality silicon

被引：61

作者：

Cerofolini, GF ^{[1
]}

Galati, C ^{[1
]}

Renna, L ^{[1
]}

机构：

[1] STMicroelect, I-95121 Catania, CT, Italy

来源：

SURFACE AND INTERFACE ANALYSIS | 2003年 / 35卷 / 12期

关键词：

silicon (100) surface; XPS Si 2p peak shape; Si-H bond distribution; Si-H depth profile; alpha-hydrogen in silicon;

D O I：

10.1002/sia.1632

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

An experimental study of the Si 2p XPS spectrum at different take-off angles of atomically flat, hydrogen-terminated 1 x 1 Si(100) is reported. The observed spectrum can be described accurately by considering three additional contributions to the spectrum of elemental silicon. Each contribution is attributed to a chemical state of silicon on the basis of its chemical shift with respect to elemental silicon and the depth of the region where it was originated. Copyright (C) 2003 John Wiley Sons, Ltd.

引用

页码：968 / 973

页数：6

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