The early oxynitridation stages of hydrogen-terminated (100) silicon after exposure to N2 : N2O.: Nitrogen bonding states

被引：10

作者：

Cerofolini, GF

Bongiorno, C

Camalleri, M

Condorelli, GG

Fragalà, IL

Galati, C

Lorenti, S

Renna, L

Spinella, C

Viscuso, O

机构：

[1] ST Microelect, I-95100 Catania, CT, Italy

[2] Inst Microelect & Microsyst, CNR, I-95100 Catania, CT, Italy

[3] Univ Catania, Dept Chem, I-95100 Catania, CT, Italy

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2002年 / 75卷 / 05期

关键词：

D O I：

10.1007/s003390101033

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Nitridation of hydrogen-terminated silicon in a diluted N-2 : N2O atmosphere was studied by X-ray photoemission spectroscopy and high-resolution electron microscopy. Our analysis showed that the broad N(1s) peak of width 1.5 eV at 398-399 eV, usually reported in the literature, is preceded by the formation of a narrow peak of width around 1.0 eV at 397.5 eV, attributed to the moiety Si3N in which silicon is only marginally oxidized, and two other peaks at 400.0 eV and 401.5 eV, attributed to the moieties Si2NOSi and SiNO, respectively.

引用

页码：585 / 590

页数：6

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