Photomodulated electron-spin resonance in amorphous silicon

被引：6

作者：

Hattori, K ^{[1
]}

Ota, Y ^{[1
]}

Sato, K ^{[1
]}

Okamoto, H ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn Sci, Dept Phys Sci, Osaka 5608531, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 84卷 / 09期

关键词：

D O I：

10.1063/1.368742

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electron-spin resonance (ESR) under a modulated photoexcitation has been measured for investigating the nonequilibrium carriers trapped at band-tail states in hydrogenated amorphous silicon. The photomodulation technique is successfully applied for detecting the weak Si-29 hyperfine structures involved in the light-induced ESR spectrum. Access to the recombination kinetics fur band-tail carriers is obtained by the frequency-domain study of modulated ESR signal. Physical insights which led from these measurements are discussed quantitatively. (C) 1998 American Institute of Physics. [S0021-8979(98)02121-5].

引用

页码：4974 / 4978

页数：5

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