GEMINATE RECOMBINATION IN A-SI-H

被引：35

作者：

BORT, M ^{[1
]}

FUHS, W ^{[1
]}

LIEDTKE, S ^{[1
]}

STACHOWITZ, R ^{[1
]}

CARIUS, R ^{[1
]}

机构：

[1] UNIV MARBURG,ZENTRUM MAT WISSENSCH,W-3550 MARBURG,GERMANY

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 1991年 / 64卷 / 04期

关键词：

D O I：

10.1080/09500839108214547

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The recombination mechanism in a-Si:H is examined by studying the lifetime distribution P(tau) of the photoluminescence using frequency-resolved spectroscopy (FRS) and by light-induced electron spin resonance (LESR). The experiments are performed in a wide range of excitation densities (10(16) cm-3 s-1 < G < 10(22) cm-3 s-1). Two ranges of distinctively different behaviour are observed: (1) At G > 5 x 10(19) cm-3 s-1, P(tau) shifts with G to shorter times, as one expects in a case of non-geminate recombination between nearest available neighbours. (2) At G < 5 x 10(18) cm-3 s-1, P(tau) is independent of G. The transient behaviour of the photoluminescence intensity and of the LESR spin density shows convincingly that in this range geminate recombination prevails.

引用

页码：227 / 233

页数：7

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