Universal mechanism for gas adsorption and electron trapping on oxidized silicon

被引：29

作者：

Shamir, N

Mihaychuk, JG

van Driel, HM

Kreuzer, HJ

机构：

[1] Univ Toronto, Dept Phys, Toronto, ON M5S 1A7, Canada

[2] Dalhousie Univ, Dept Phys, Halifax, NS B3H 3J5, Canada

[3] Nucl Res Ctr Negev, IL-84190 Beer Sheva, Israel

来源：

PHYSICAL REVIEW LETTERS | 1999年 / 82卷 / 02期

关键词：

D O I：

10.1103/PhysRevLett.82.359

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report that common gases (such as He, Ar, H-2, O-2, N-2, CO) experience adsorption at oxidized silicon surfaces at 300 K via electrostatic coupling. This is deduced using contact potential measurements of the work function for gas pressure in the range 10(-3) < P < 10(2) Torr. The adsorption can be enhanced through surface charging via internal photoemission of electrons leading to mutual electron-gas transient trapping. A simple electrostatic model based on monopole-dipole coupling results in an isotherm in agreement with the data.

引用

页码：359 / 361

页数：3

共 14 条

[1]

BARDWELL J, COMMUNICATION

[2] Electron photoinjection from silicon to ultrathin SiO2 films via ambient oxygen [J].