ULTRAVIOLET LASER-INDUCED OXIDATION OF SILICON - THE EFFECT OF OXYGEN PHOTODISSOCIATION UPON OXIDE-GROWTH KINETICS

被引:20
作者
ORLOWSKI, TE
MANTELL, DA
机构
关键词
D O I
10.1063/1.341263
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:4410 / 4414
页数:5
相关论文
共 15 条
[1]  
EHRLICH DJ, 1983, J VAC SCI TECHNOL B, V1, P969, DOI 10.1116/1.582718
[2]   KINETICS OF THERMAL GROWTH OF ULTRA-THIN LAYERS OF SIO2 ON SILICON .2. THEORY [J].
GHEZ, R ;
VANDERME.YJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (08) :1100-+
[3]   LOCAL ATOMIC AND ELECTRONIC-STRUCTURE OF OXIDE-GAAS AND SIO2-SI INTERFACES USING HIGH-RESOLUTION XPS [J].
GRUNTHANER, FJ ;
GRUNTHANER, PJ ;
VASQUEZ, RP ;
LEWIS, BF ;
MASERJIAN, J ;
MADHUKAR, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1443-1453
[4]   EVIDENCE FOR A PARALLEL PATH OXIDATION MECHANISM AT THE SI-SIO2 INTERFACE [J].
IRENE, EA .
APPLIED PHYSICS LETTERS, 1982, 40 (01) :74-75
[5]  
KOBEDA E, 1986, J VAC SCI TECHNOL B, V4, P722
[6]   LOW-TEMPERATURE GROWTH OF SILICON DIOXIDE FILMS - A STUDY OF CHEMICAL BONDING BY ELLIPSOMETRY AND INFRARED-SPECTROSCOPY [J].
LUCOVSKY, G ;
MANITINI, MJ ;
SRIVASTAVA, JK ;
IRENE, EA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (02) :530-537
[7]  
MANTELL DA, 1987, BEAM SOLID INTERACTI, V74, P141
[8]   DESIGN AND ANALYSIS OF A HIGH INTENSITY FAST OXYGEN ATOM SOURCE [J].
MILLER, DR ;
PATCH, DF .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1969, 40 (12) :1566-&
[9]   KINETICS OF ULTRATHIN SIO2 GROWTH [J].
MURALI, V ;
MURARKA, SP .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (06) :2106-2114