10Gbit/s high sensitivity, low-voltage-operation avalanche photodiodes with thin InAlAs multiplication layer and waveguide structure

被引：41

作者：

Nakata, T ^{[1
]}

Takeuchi, T ^{[1
]}

Watanabe, I ^{[1
]}

Makita, K ^{[1
]}

Torikai, T ^{[1
]}

机构：

[1] NBC Corp, Syst Devices & Fundamental Res, Photon & Wireless Devices Res Labs, Tsukuba, Ibaraki 3058501, Japan

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 24期

关键词：

D O I：

10.1049/el:20001421

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The development of waveguide avalanche photodiodes with a very thin 0.1 mum multiplication layer for use in high-speed, high-sensitivity, low-voltage-operation receivers is presented. A eta = 76%, a GB product of 180GHz, and a breakdown voltage Vb of 15V were obtained. The 10Gbit/s bit error rate measurement showed a sensitivity of -28.8dBm (BER 10(-9), PRES 2(23)-1), which is the highest sensitivity yet reported for APD receivers.

引用

页码：2033 / 2034

页数：2

共 10 条

[1] Waveguide AlInAs/GaAlInAs avalanche photodiode with a gain-bandwidth product over 160GHz [J].

Cohen-Jonathan, C ;

Giraudet, L ;

Bonzo, A ;

Praseuth, JP .

ELECTRONICS LETTERS, 1997, 33 (17) :1492-1493

[2] Resonant-cavity InGaAs-InAlAs avalanche photodiodes with gain-bandwidth product of 290 GHz [J].

Lenox, C ;

Nie, H ;

Yuan, P ;

Kinsey, G ;

Homles, AL ;

Streetman, BG ;

Campbell, JC .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (09) :1162-1164

[3] Low excess noise characteristics in thin avalanche region GaAs diodes [J].

Li, KF ;

Ong, DS ;

David, JPR ;

Tozer, RC ;

Rees, GJ ;

Robson, PN ;

Grey, R .

ELECTRONICS LETTERS, 1998, 34 (01) :125-126

[4] InAlAs avalanche photodiodes with very thin multiplication layer of 0.1μm for highspeed and low-voltage-operation optical receiver [J].

Nakata, T ;

Watanabe, I ;

Makita, K ;

Torikai, T .

ELECTRONICS LETTERS, 2000, 36 (21) :1807-1809

[5]

NAKATA T, 1999, 45 SPRING M JPN SOC, pA31

[6] Resonant-cavity separate absorption, charge and multiplication avalanche photodiodes with high-speed and high gain-bandwidth product [J].

Nie, H ;

Anselm, KA ;

Lenox, C ;

Yuan, P ;

Hu, C ;

Kinsey, G ;

Streetman, BG .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1998, 10 (03) :409-411

[7]

Takeuchi T, 1999, IEICE T ELECTRON, VE82C, P1502

[8] A high-sensitivity APD receiver for 10-Gb/s system applications [J].

Tzeng, LD ;

Mizuhzra, O ;

Nguyen, TV ;

Ogawa, K ;

Watanabe, I ;

Makita, K ;

Tsuji, M ;

Taguchi, K .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1996, 8 (09) :1229-1231

[9]

Yoshida N., 1999, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369), P287, DOI 10.1109/GAAS.1999.803776

[10] 10-gigabit-per-second high-sensitivity and wide-dynamic-range APD-HEMT optical receiver [J].

Yun, TY ;

Park, MS ;

Han, JH ;

Watanabe, I ;

Makita, K .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1996, 8 (09) :1232-1234

← 1 →