InAlAs avalanche photodiodes with very thin multiplication layer of 0.1μm for highspeed and low-voltage-operation optical receiver

被引：22

作者：

Nakata, T ^{[1
]}

Watanabe, I ^{[1
]}

Makita, K ^{[1
]}

Torikai, T ^{[1
]}

机构：

[1] NEC Corp Ltd, Syst Devices & Fundmental Res, Photon & Wireless Devices Res Labs, Tsukuba, Ibaraki 3058501, Japan

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 21期

关键词：

D O I：

10.1049/el:20001278

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed a separated absorption and multiplication (SAM) avalanche photodiode (APD) with the thinnest reported InAlAs multiplication layer of 0.1 mum and achieved 18.8V operation, with high speed and a high GB product of 140GHz. This makes it possible to realise a compact 10Gbit/s APD receiver.

引用

页码：1807 / 1809

页数：3

共 6 条

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