Resonant-cavity separate absorption, charge and multiplication avalanche photodiodes with high-speed and high gain-bandwidth product

被引：56

作者：

Nie, H ^{[1
]}

Anselm, KA ^{[1
]}

Lenox, C ^{[1
]}

Yuan, P ^{[1
]}

Hu, C ^{[1
]}

Kinsey, G ^{[1
]}

Streetman, BG ^{[1
]}

机构：

[1] Univ Texas, Microelect Res Ctr, Dept Elect & Comp Engn, Austin, TX 78712 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1998年 / 10卷 / 03期

基金：

美国国家科学基金会;

关键词：

avalanche photodiodes; bandwidth;

D O I：

10.1109/68.661426

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Previously, it has been shown that resonant-cavity separate-absorption-and-multiplication (SAM) avalanche photodiodes (APD's) exhibit high-speed and high gain-bandwidth products, In this letter, we describe a resonant-cavity SAM APD with an additional charge layer that provides better control of the electric field profile, These devices have achieved bandwidths as high as 33 GHz in the low-gain regime and a record gain-bandwidth product of 290 GHz, We also describe the correlation between the gain-bandwidth product and the doping level in the charge layer, With width-dependent ionization coefficients, the current versus voltage (I-V) and gain-bandwidth simulations agree well with the measured results, and indicate that even higher gain-bandwidth should be achievable with an optimized SACM APD structure.

引用

页码：409 / 411

页数：3

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