Time-resolved studies of single semiconductor quantum dots

被引：57

作者：

Zwiller, V ^{[1
]}

Pistol, ME ^{[1
]}

Hessman, D ^{[1
]}

Cederström, R ^{[1
]}

Seifert, W ^{[1
]}

Samuelson, L ^{[1
]}

机构：

[1] Univ Lund, S-22100 Lund, Sweden

来源：

PHYSICAL REVIEW B | 1999年 / 59卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.59.5021

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present time-resolved optical studies of single self-assembled quantum dots. The dots were obtained by Stranski-Krasranow growth of InP on Ga0.5In0.5P. A selective technique based on etching after electron-beam lithography, combined with the use of an optical microscope to enhance the spatial resolution of a time-resolved photoluminescence system, enabled the observation of single quantum dots. The emission linewidth of a single InP dot is observed to be around 3 meV. The evolution of the time-resolved photoluminescence spectra was studied as a function of excitation intensity. Under intense pulsed excitation the decay is no more a simple exponential due to feeding from higher energy levels, as a result of state filling. A four-level rate equation system is successfully used to model the results. [S0163-1829(99)06204-9].

引用

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页码：5021 / 5025

页数：5

相关论文

共 23 条

[1] Microphotoluminescence studies of single quantum dots .1. Time-resolved experiments [J].

Bockelmann, U ;

Heller, W ;

Filoramo, A ;

Roussignol, P .

PHYSICAL REVIEW B, 1997, 55 (07) :4456-4468

[2] PHOTOLUMINESCENCE FROM A SINGLE GAAS/ALGAAS QUANTUM DOT [J].

BRUNNER, K ;

BOCKELMANN, U ;

ABSTREITER, G ;

WALTHER, M ;

BOHM, G ;

TRANKLE, G ;

WEIMANN, G .

PHYSICAL REVIEW LETTERS, 1992, 69 (22) :3216-3219

[3] STUDY OF THE 2-DIMENSIONAL 3-DIMENSIONAL GROWTH MODE TRANSITION IN METALORGANIC VAPOR-PHASE EPITAXY OF GAINP/INP QUANTUM-SIZED STRUCTURES [J].

CARLSSON, N ;

SEIFERT, W ;

PETERSSON, A ;

CASTRILLO, P ;

PISTOL, ME ;

SAMUELSON, L .

APPLIED PHYSICS LETTERS, 1994, 65 (24) :3093-3095

[4] BAND FILLING AT LOW OPTICAL POWER-DENSITY IN SEMICONDUCTOR DOTS [J].

CASTRILLO, P ;

HESSMAN, D ;

PISTOL, ME ;

ANAND, S ;

CARLSSON, N ;

SEIFERT, W ;

SAMUELSON, L .

APPLIED PHYSICS LETTERS, 1995, 67 (13) :1905-1907

[5] TRANSMISSION ELECTRON-MICROSCOPY INVESTIGATION OF THE MORPHOLOGY OF INP STRANSKI-KRASTANOW ISLANDS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].

GEORGSSON, K ;

CARLSSON, N ;

SAMUELSON, L ;

SEIFERT, W ;

WALLENBERG, LR .

APPLIED PHYSICS LETTERS, 1995, 67 (20) :2981-2982

[6] Carrier relaxation dynamics in quantum dots: Scattering mechanisms and state-filling effects [J].

Grosse, S ;

Sandmann, JHH ;

vonPlessen, G ;

Feldmann, J ;

Lipsanen, H ;

Sopanen, M ;

Tulkki, J ;

Ahopelto, J .

PHYSICAL REVIEW B, 1997, 55 (07) :4473-4476

[7] Theory of random population for quantum dots [J].

Grundmann, M ;

Bimberg, D .

PHYSICAL REVIEW B, 1997, 55 (15) :9740-9745

[8] Excited states of individual quantum dots studied by photoluminescence spectroscopy [J].

Hessman, D ;

Castrillo, P ;

Pistol, ME ;

Pryor, C ;

Samuelson, L .

APPLIED PHYSICS LETTERS, 1996, 69 (06) :749-751

[9] RADIATIVE LIFETIME OF LOCALIZED EXCITONS IN GAAS QUANTUM DOTS [J].

KONO, T ;

NAGAMUNE, Y ;

NISHIOKA, M ;

ARAKAWA, Y .

SUPERLATTICES AND MICROSTRUCTURES, 1995, 17 (01) :73-76

[10] INTRINSIC RADIATIVE LIFETIMES OF INP/IN0.48GA0.52P QUANTUM DOTS [J].

KURTENBACH, A ;

RUHLE, WW ;

EBERL, K .

SOLID STATE COMMUNICATIONS, 1995, 96 (05) :265-269