Time-resolved studies of single semiconductor quantum dots

被引：57

作者：

Zwiller, V ^{[1
]}

Pistol, ME ^{[1
]}

Hessman, D ^{[1
]}

Cederström, R ^{[1
]}

Seifert, W ^{[1
]}

Samuelson, L ^{[1
]}

机构：

[1] Univ Lund, S-22100 Lund, Sweden

来源：

PHYSICAL REVIEW B | 1999年 / 59卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.59.5021

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present time-resolved optical studies of single self-assembled quantum dots. The dots were obtained by Stranski-Krasranow growth of InP on Ga0.5In0.5P. A selective technique based on etching after electron-beam lithography, combined with the use of an optical microscope to enhance the spatial resolution of a time-resolved photoluminescence system, enabled the observation of single quantum dots. The emission linewidth of a single InP dot is observed to be around 3 meV. The evolution of the time-resolved photoluminescence spectra was studied as a function of excitation intensity. Under intense pulsed excitation the decay is no more a simple exponential due to feeding from higher energy levels, as a result of state filling. A four-level rate equation system is successfully used to model the results. [S0163-1829(99)06204-9].

引用

收藏

页码：5021 / 5025

页数：5

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