Novel metallic behavior in two dimensions

被引：21

作者：

Feng, XG

Popovic, D

Washburn, S

Dobrosavljevic, V

机构：

[1] Florida State Univ, Natl High Magnet Field Lab, Tallahassee, FL 32310 USA

[2] Univ N Carolina, Dept Phys & Astron, Chapel Hill, NC 27599 USA

来源：

PHYSICAL REVIEW LETTERS | 2001年 / 86卷 / 12期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1103/PhysRevLett.86.2625

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Experiments on a sufficiently disordered two-dimensional (2D) electron system in silicon reveal a new and unexpected kind of metallic behavior, where the conductivity decreases as sigma (n(s),T)= sigma (n(s),T = 0) + A(n(s))T-2 (where n(s) is carrier density) to a nonzero value as temperature T --> 0. In 2D, the existence of a metal with d sigma /dT > 0 is very surprising. In addition, a novel type of a metal-insulator transition obtains, which is unlike any known quantum phase transition in 2D.

引用

收藏

页码：2625 / 2628

页数：4

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