High-performance GaInP/AlGaInP strained quantum well lasers grown by solid source molecular beam epitaxy

被引：9

作者：

Toivonen, M

Savolainen, P

Pessa, M

机构：

[1] Department of Physics, Tampere University of Technology, FIN-33101 Tampere

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1996年 / 11卷 / 12期

关键词：

D O I：

10.1088/0268-1242/11/12/026

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-performance visible (lambda approximate to 680 nm) GaxIn1-xP/(AlyGa1-y)(0.51)In0.49P compressively strained single quantum well laser diodes have been grown by solid source molecular beam epitaxy. The waveguide region was designed to have a low Al content in order to enhance the optical field confinement and to improve the material quality. The threshold current density for an infinity long cavity length was estimated to be 150 A cm(-2). The highest external quantum efficiency of 37% per facet was obtained for a cavity length of 480 mu m. A characteristic temperature of 130 K was measured in the temperature interval from 20 degrees G to 50 degrees C.

引用

收藏

页码：1923 / 1926

页数：4

相关论文

共 16 条

[1] REPRODUCIBILITY STUDIES OF LATTICE-MATCHED GAINASP ON (100) INP GROWN BY MOLECULAR-BEAM EPITAXY USING SOLID PHOSPHORUS [J].

BAILLARGEON, JN ;

CHO, AY ;

THIEL, FA ;

FISCHER, RJ ;

PEARAH, PJ ;

CHENG, KY .

APPLIED PHYSICS LETTERS, 1994, 65 (02) :207-209

[2] STRAINED GAXIN1-XP/(ALGA)0.5IN0.5P HETEROSTRUCTURES AND QUANTUM-WELL LASER-DIODES [J].

BOUR, DP ;

GEELS, RS ;

TREAT, DW ;

PAOLI, TL ;

PONCE, F ;

THORNTON, RL ;

KRUSOR, BS ;

BRINGANS, RD ;

WELCH, DF .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1994, 30 (02) :593-607

[3]

HAYAKAWA T, 1988, JPN J APPL PHYS, V27, pL1533

[4] SOLID SOURCE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GA0.5IN0.5P USING A VALVED, 3-ZONE PHOSPHORUS SOURCE [J].

HOKE, WE ;

WEIR, DG ;

LEMONIAS, PJ ;

HENDRIKS, HT ;

JACKSON, GS ;

COLOMBO, P .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (02) :733-735

[5] MOLECULAR-BEAM EPITAXIAL-GROWTH OF ARSENIDE PHOSPHIDE HETEROSTRUCTURES USING VALVED, SOLID GROUP-V SOURCES [J].

JOHNSON, FG ;

WICKS, GW ;

VITURRO, RE ;

LAFORCE, R .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (03) :823-825

[6] DESIGN AND OPERATION OF A VALVED SOLID-SOURCE AS2 OVEN FOR MOLECULAR-BEAM EPITAXY [J].

MILLER, DL ;

BOSE, SS ;

SULLIVAN, GJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (02) :311-315

[7] RAPID-THERMAL ANNEALING FOR QUANTUM-WELL HETEROSTRUCTURE DEVICE FABRICATION [J].

MYERS, DR ;

VAWTER, GA ;

JONES, ED ;

ZIPPERIAN, TE ;

DRUMMOND, TJ ;

FRITZ, IJ ;

DAWSON, LR ;

BRENNAN, TM ;

HAMMONS, BE ;

DATYE, AK ;

SIMONS, DS ;

COMAS, J .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (01) :41-49

[8] 1W CW, 672NM VISIBLE LASER-DIODES [J].

SERREZE, HB ;

HARDING, CM ;

WATERS, RG .

ELECTRONICS LETTERS, 1991, 27 (24) :2245-2246

[9] GAINP-(ALYGA1-Y)INP 670 NM QUANTUM-WELL LASERS FOR HIGH-TEMPERATURE OPERATION [J].

SMOWTON, PM ;

BLOOD, P .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1995, 31 (12) :2159-2164

[10] RELIABLE RED-EMITTING LASER-DIODES GROWN BY SOLID SOURCE MOLECULAR-BEAM EPITAXY [J].

TAKAHASHI, K ;

TAKEOKA, T ;

KAN, Y ;

TSUNODA, A ;

TANI, K ;

HOSODA, M ;

MATSUI, S ;

YAMAMOTO, S .

JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) :1333-1337