Characterization of implantation Layer in (1(1)over-bar-00) oriented 4H- and 6H-SiC

The polytypic structure of implanted layers in (1 (1) over bar 00)-oriented 4H- and GH-SiC has been investigated using Rutherford backscattering spectrometry (RBS) combined with channeling technique and cross-sectional transmission electron microscopy (XTEM). The ( 1 (1) over bar 00) oriented 4H- and 6H-SiC have been implanted with 400 keV Al ions to a dose of 2 x 10(15) /cm(2) through a 550 nm thick SiO2 layer and 400 keV Ga ions to a dose of 5 x 10(15)/cm(2) through a 200 nm-thick SiO2 layer,respectively, at room temperature. In both Al and Ga implanted (1 (1) over bar 00) oriented SiC, the implantation-induced amorphous layer are recrsytallized by annealing above 1500 degreesC for 30 min, respectively, with good crystalline quality. The XTEM investigation reveals that the amorphous layer in Ga implanted SiC(1 (1) over bar 00) is regrown in accordance with the polytype of substrate.