GROWTH OF SINGLE-CRYSTAL BETA-SIC FILMS ON A SI SUBSTRATE BY A DIRECT CARBONIZATION METHOD

Single crystal β-SiC films have been formed on a Si substrate by a thermal reaction between the substrate and carbon atoms sublimed from a high purity graphite source. The film properties are characterised by the Rutherford backscattering technique and an electron diffraction method. It has been demonstrated that single crystal β-SiC films are formed on a (111)-Si substrate by the thermal reaction above 900°C between the substrate and carbon atoms. © 1990, The Institution of Electrical Engineers. All rights reserved.