FORMATION OF BETA-SIC LAYERS ON HEATED SILICON-WAFERS EXPOSED TO SUBLIMED CARBON

被引：3

作者：

DURUPT, P

GAUTHIER, JP

ROGER, JA

PIVOT, J

机构：

[1] UNIV CLAUDE BERNARD LYON 1,CNRS,CRISTALLOG LAB,F-69622 VILLEURBANNE,FRANCE

[2] UNIV CLAUDE BERNARD LYON 1,CNRS,DEPT PHYS MAT,F-69622 VILLEURBANNE,FRANCE

来源：

THIN SOLID FILMS | 1981年 / 85卷 / 02期

关键词：

D O I：

10.1016/0040-6090(81)90631-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：L191 / L193

页数：3

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