Compensation mechanism for N acceptors in ZnO

被引：367

作者：

Lee, EC ^{[1
]}

Kim, YS ^{[1
]}

Jin, YG ^{[1
]}

Chang, KJ ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Phys, Taejon 305701, South Korea

来源：

PHYSICAL REVIEW B | 2001年 / 64卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.64.085120

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a mechanism for the compensation of N acceptors in ZnO through real-space multigrid electronic structure calculations within the local-density-functional approximation. We find that at low N doping levels using a normal N-2 source, O vacancies are the main compensating donors for N acceptors, while N acceptors are compensated via the formation of defect complexes with Zn antisites at high doping levels, When an active plasma N-2 gas is used to increase the N solubility, N acceptors are still greatly compensated by N-2 molecules at oxygen sites and N-acceptor-N-2 complexes, explaining the difficulty in achieving low-resistivity p-type ZnO.

引用

页数：5

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