Application of the partial wave expansion method in 3-D low energy electron beam lithography simulation

被引：5

作者：

Zianni, X

Velessiotis, D

Glezos, N ^{[1
]}

Trohidou, KN

机构：

[1] NCSR Demokritos, Inst Microelect, GR-15310 Athens, Aghia Paraskevi, Greece

[2] NCSR Demokritos, Inst Mat Sci, GR-15310 Athens, Aghia Paraskevi, Greece

来源：

MICROELECTRONIC ENGINEERING | 2001年 / 57-8卷

关键词：

low-energy electron beam lithography; partial wave expansion method;

D O I：

10.1016/S0167-9317(01)00499-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the partial wave expansion method (PWEM) is used in order to calculate the electron elastic scattering cross section in the case of low energy electron beam lithography. The cross section was evaluated by a numerical approach and introduced into the main Monte-Carlo program as a look-up table in order to reduce simulation time. The results are compared to the Born approximation in the case of PMMA and a polyoxometalate resist. The results are incorporated into the SELID simulator in order to obtain the final developed profiles. It was deduced that the PWEM is necessary for low energies and high-Z substrates. (C) 2001 Elsevier Science BY. All rights reserved.

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页码：297 / 302

页数：6

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