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Microstructural and interband transition properties of vertically stacked InAs/GaAs self-assembled quantum dots embedded in modulation-doped heterostructures

被引：9
作者：
Kim, TW
Lee, DU
Choo, DC
Kim, HJ
Lee, HS
Lee, JY
Kim, MD
机构：
[1] Kwangwoon Univ, Dept Phys, Seoul 139701, South Korea
[2] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
[3] Samsung Elect, Div Optoelect, Suwon 442742, Kyungki Do, South Korea
来源：
APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 01期
关键词：
D O I：
10.1063/1.1380239
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The transmission electron microscopy image and selected area electron diffraction pattern showed that self-assembled InAs quantum-dot (QD) arrays embedded in GaAs barriers were periodically inserted in an Al0.25Ga0.75As/GaAs heterostructure. The temperature-dependent photoluminescence spectra of the InAs/GaAs quantum dots embedded in modulation-doped heterostructures showed interband transitions from the first-excited electronic subband to the first-excited heavy-hole subband together with those from the ground subband to the ground heavy-hole band (E-1-HH1) while the spectra of the InAs/GaAs QDs alone showed only the peak related to the (E-1-HH1) transitions. (C) 2001 American Institute of Physics.
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收藏
页码：33 / 35
页数：3
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