Deposition of heteroepitaxial In2O3 thin films by molecular beam epitaxy

被引：48

作者：

Taga, N ^{[1
]}

Maekawa, M

Shigesato, Y

Yasui, I

Kakei, M

Haynes, TE

机构：

[1] Asahi Glass Co Ltd, Res Ctr, Kanagawa Ku, Yokohama, Kanagawa 2218755, Japan

[2] Aoyama Gakuin Univ, Coll Sci & Engn, Setagaya Ku, Tokyo 1578572, Japan

[3] Univ Tokyo, Inst Ind Sci, Minato Ku, Tokyo 1068558, Japan

[4] Oak Ridge Natl Lab, Div Solid State, Oak Ridge, TN 37831 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 12A期

关键词：

In2O3; hetero epitaxial; molecular beam epitaxy; Rutherford backscattering; thin film; crystallinity; Volmer-Weber;

D O I：

10.1143/JJAP.37.6524

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly oriented thin film In2O3 was heteroepitaxially grown on an optically polished (001) plane of single crystalline yttria stabilized zirconia (YSZ) substrate using molecular beam epitaxy (MBE). The full-width at half maximum (FWHM) of the X-ray rocking curve was 0.08 degrees for 200-nm-thick In2O3 layers indicating excellent uniformity of the crystallographic orientation compared with the heteroepitaxially-grown In2O3 deposited by a conventional method such as electron-beam (e-beam) evaporation. The minimum yield (chi(min)) of the MBE grown In2O3 film obtained from Rutherford backscattering (RBS) spectra was also extremely small with a value of 3.1% implying high crystallinity with very low lattice defect density.

引用

页码：6524 / 6529

页数：6

共 22 条

[1] PRODUCTION OF HIGH-ENERGY NEUTRAL ATOMS BY SCATTERING OF IONS AT SOLID SURFACES AND ITS RELATION TO SPUTTERING [J].

BRODIE, I ;

LAMONT, LT ;

JEPSEN, RL .

PHYSICAL REVIEW LETTERS, 1968, 21 (17) :1224-&

[2] HALL-EFFECT MEASUREMENT ON POLYCRYSTALLINE SNO2 THIN-FILMS [J].

FUJISAWA, A ;

NISHINO, T ;

HAMAKAWA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (04) :552-555

[3]

HAMBERG I, 1986, J APPL PHYS, V60, P123

[4] LOW RESISTIVITY INDIUM TIN OXIDE TRANSPARENT CONDUCTIVE FILMS .2. EFFECT OF SPUTTERING VOLTAGE ON ELECTRICAL PROPERTY OF FILMS [J].

ISHIBASHI, S ;

HIGUCHI, Y ;

OTA, Y ;

NAKAMURA, K .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (03) :1403-1406

[5] HETEROEPITAXIAL GROWTH OF TIN-DOPED INDIUM OXIDE-FILMS ON SINGLE-CRYSTALLINE YTTRIA-STABILIZED ZIRCONIA SUBSTRATES [J].

KAMEI, M ;

YAGAMI, T ;

TAKAKI, S ;

SHIGESATO, Y .

APPLIED PHYSICS LETTERS, 1994, 64 (20) :2712-2714

[6] ELECTRON-MICROSCOPIC AND ION-SCATTERING STUDIES OF HETEROEPITAXIAL TIN-DOPED INDIUM OXIDE-FILMS [J].

KAMEI, M ;

SHIGESATO, Y ;

TAKAKI, S ;

HAYASHI, Y ;

SASAKI, M ;

HAYNES, TE .

APPLIED PHYSICS LETTERS, 1994, 65 (05) :546-548

[7] ELECTROCHROMIC DEVICES FOR TRANSMISSIVE AND REFLECTIVE LIGHT CONTROL [J].

KAMIMORI, T ;

NAGAI, J ;

MIZUHASHI, M .

SOLAR ENERGY MATERIALS, 1987, 16 (1-3) :27-38

[8]

KAWASAKI M, 1994, MRS B SEP, P33

[9] MECHANISM OF CARRIER TRANSPORT IN HIGHLY EFFICIENT SOLAR-CELLS HAVING INDIUM TIN OXIDE SI JUNCTIONS [J].

KOBAYASHI, H ;

ISHIDA, T ;

NAKATO, Y ;

TSUBOMURA, H .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (03) :1736-1743

[10] HIGH CONDUCTING LARGE AREA INDIUM TIN OXIDE ELECTRODES FOR DISPLAYS PREPARED BY DC MAGNETRON SPUTTERING [J].

LATZ, R ;

MICHAEL, K ;

SCHERER, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (2A) :L149-L151

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