(111) and (100) YSZ as substrates for indium nitride growth

被引：12

作者：

Anderson, PA ^{[1
]}

Kendrick, CE ^{[1
]}

Kinsey, RJ ^{[1
]}

Asadov, A ^{[1
]}

Gao, W ^{[1
]}

Reeves, RJ ^{[1
]}

Durbin, SM ^{[1
]}

机构：

[1] Univ Canterbury, MacDiarmid Inst, Dept Elect & Comp Engn, Christchurch 1, New Zealand

来源：

PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 7 | 2005年 / 2卷 / 07期

关键词：

D O I：

10.1002/pssc.200461336

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Wurtzite and zincblende InN have been grown on (111) and (100) oriented YSZ respectively using a PAMBE technique. Despite a 3D growth mode, the Hall mobility, carrier concentration and PL intensities in the case of (111) YSZ substrates surpassed that commonly obtained using sapphire substrates. An unexpected Hall mobility dependence on growth temperature was identified for both orientations. (111) YSZ shows promise as an alternative to sapphire, which may enable device quality InN to be achieved. XRD and EBSD measurements on the (100) films identified both the zincblende and wurtzite phases as present within the films. Analysis of the RHEED suggests the film nucleates in the cubic phase but as growth progresses the wurtzite phase forms and grows to dominate the film. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2320 / 2323

页数：4

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