A 3.2% efficient Kesterite device from electrodeposited stacked elemental layers

被引:207
作者
Scragg, Jonathan J. [2 ]
Berg, Dominik M. [1 ]
Dale, Phillip J. [1 ]
机构
[1] Univ Luxembourg, Dept Phys, LPV, L-4422 Luxembourg, Luxembourg
[2] Univ Bath, Dept Chem, Bath BA2 7AY, Avon, England
基金
英国工程与自然科学研究理事会;
关键词
Cu(2)ZnSnS(4); Kesterite; Electrodeposition; Photovoltaics; Stacked elemental layer; Solar cells; CU2ZNSNS4; THIN-FILMS; MORPHOLOGICAL CHARACTERIZATION; ELECTROPLATED PRECURSORS; PHASE-EQUILIBRIA; ALKALINE BATH; SOLAR-CELLS; SULFURIZATION; DEPOSITION; SORBITOL; SYSTEM;
D O I
10.1016/j.jelechem.2010.01.008
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
An improved electrodeposition-annealing route for preparing films of the Kesterite Cu(2)ZnSnS(4)(CZTS) for thin film solar cell absorber layers is demonstrated. The material is prepared by sequential electrodeposition of a metallic precursor stack in the order Cu/Sn/Cu/Zn and subsequent annealing of the stack in an atmosphere containing sulfur. The new precursor is demonstrably more uniform on both macro-and microscopic scales, and this translates to enhanced lateral uniformity of the photoresponse of the CZTS film. Photovoltaic devices were prepared from the films, with the best cell having an efficiency of 3.2%. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:52 / 59
页数:8
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