Changing the size and shape of Ge island by chemical etching

被引：4

作者：

Gao, F

Huang, CJ

Huang, DD

Li, JP

Sun, DZ

Kong, MY

Zeng, YP

Li, JM

Lin, LY

机构：

[1] Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China

[2] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 231卷 / 1-2期

基金：

中国国家自然科学基金;

关键词：

atomic force microscopy; etching; nanostructures; molecular beam epitaxy; semiconducting germanium; semiconducting silicon;

D O I：

10.1016/S0022-0248(01)01357-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Self-assembled Ge islands were grown on Si (1 0 0) substrate by Si2H6-Ge molecular beam epitaxy. Subjected to a chemical etching, it is found that the size and shape (i.e. ratio of height to base width) of Ge islands change with etching time. In addition, the photoluminescence from the etched Ge islands shifted to the higher energy side compared to that of the as-deposited Ge islands. Our results demonstrated that chemical etching can be a way to change the size and shape of the as-deposited islands as well as their luminescence property. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：17 / 21

页数：5

共 15 条

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