Effect of Si overgrowth on the structural and luminescence properties of Ge islands on Si(100)

被引：9

作者：

Liu, JP ^{[1
]}

Wang, JZ ^{[1
]}

Huang, DD ^{[1
]}

Li, JP ^{[1
]}

Sun, DZ ^{[1
]}

Kong, MY ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 207卷 / 1-2期

关键词：

D O I：

10.1016/S0022-0248(99)00412-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The effect of Si overgrowth on the structural and luminescence properties of strained Ge layer grown on Si(1 0 0) is studied. Capping Si leads to the dissolution of Ge island apex and reduced island height. The structural changes in island shape, especially in chemical composition during Si overgrowth have a large effect on the PL properties. The integrated PL intensity of Ge layer increases and there are large blue shifts in peak energies after capping Si. The PL spectra from buried Ge layer are consistent with type-II band alignment in SiGe/Si. We show that the PL properties from buried Ge layer may be tailored by modifying the cap layer growth conditions as well as post-growth annealing. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：150 / 153

页数：4

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