Evolution of height distribution of Ge islands on Si(1 0 0)

被引：7

作者：

Liu, JP ^{[1
]}

Gong, Q ^{[1
]}

Huang, DD ^{[1
]}

Li, JP ^{[1
]}

Sun, DZ ^{[1
]}

Kong, MY ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 200卷 / 3-4期

关键词：

Ge islands; Ge films; bimodal distribution; Ehrlich-Schwoebel barriers;

D O I：

10.1016/S0022-0248(99)00069-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Evolution of the height distribution of Ge islands during in situ annealing of Ge films on Si(1 0 0) has been studied. Island height is found to have a bimodal distribution. The standard deviation of the island height divided by the mean island height, for the mode of larger island size is more than that for the other mode. We suggest that the presence of Ehrlich-Schwoebel barriers, combined with the misfit strain, can lead to the bimodal distribution of island size, the mode of larger island size having narrower base size distribution, but wider height distribution for Ge islands on Si(1 0 0). The bimodal distribution of island size could be stable due to kinetics without necessarily regarding it as minimum-energy configuration. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：617 / 620

页数：4

共 15 条

[1]

Barabasi AL, 1997, APPL PHYS LETT, V70, P2565, DOI 10.1063/1.118920

[2] Dislocation-free island formation in heteroepitaxial growth: A study at equilibrium [J].

Daruka, I ;

Barabasi, AL .

PHYSICAL REVIEW LETTERS, 1997, 79 (19) :3708-3711

[3] Diffusional narrowing of Ge on Si(100) coherent island quantum dot size distributions [J].

Drucker, J ;

Chaparro, S .

APPLIED PHYSICS LETTERS, 1997, 71 (05) :614-616

[4] DISLOCATION-FREE STRANSKI-KRASTANOW GROWTH OF GE ON SI(100) [J].

EAGLESHAM, DJ ;

CERULLO, M .

PHYSICAL REVIEW LETTERS, 1990, 64 (16) :1943-1946

[5] ATOMIC VIEW OF SURFACE SELF-DIFFUSION - TUNGSTEN ON TUNGSTEN [J].

EHRLICH, G ;

HUDDA, FG .

JOURNAL OF CHEMICAL PHYSICS, 1966, 44 (03) :1039-&

[6] Size distribution of Ge islands grown on Si(001) [J].

Goryll, M ;

Vescan, L ;

Schmidt, K ;

Mesters, S ;

Luth, H ;

Szot, K .

APPLIED PHYSICS LETTERS, 1997, 71 (03) :410-412

[7] ONSET OF INCOHERENCY AND DEFECT INTRODUCTION IN THE INITIAL-STAGES OF MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGHLY STRAINED INXGA1-XAS ON GAAS(100) [J].

GUHA, S ;

MADHUKAR, A ;

RAJKUMAR, KC .

APPLIED PHYSICS LETTERS, 1990, 57 (20) :2110-2112

[8] Deposition of three-dimensional Ge islands on Si(001) by chemical vapor deposition at atmospheric and reduced pressures [J].

Kamins, TI ;

Carr, EC ;

Williams, RS ;

Rosner, SJ .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (01) :211-219

[9] Annealing of Ge nanocrystals on Si(001) at 550°C:: Metastability of huts and the stability of pyramids and domes [J].

Medeiros-Ribeiro, G ;

Kamins, TI ;

Ohlberg, DAA ;

Williams, RS .

PHYSICAL REVIEW B, 1998, 58 (07) :3533-3536

[10] Shape transition of germanium nanocrystals on a silicon (001) surface from pyramids to domes [J].

Medeiros-Ribeiro, G ;

Bratkovski, AM ;

Kamins, TI ;

Ohlberg, DAA ;

Williams, RS .

SCIENCE, 1998, 279 (5349) :353-355

← 1 2 →