Ge/Ag(111) semiconductor-on-metal growth:: Formation of an Ag2Ge surface alloy

被引:84
作者
Oughaddou, H
Sawaya, S
Goniakowski, J
Aufray, B
Le Lay, G
Gay, JM
Tréglia, G
Bibérian, JP
Barrett, N
Guillot, C
Mayne, A
Dujardin, G
机构
[1] Ctr Rech Mecan Croissance Cristalline, CNRS, F-13288 Marseille 9, France
[2] Univ Aix Marseille 1, UFR Sci Mat, Marseille, France
[3] Ctr Univ Paris Sud, CEA, DRECAM, SRSIM, F-91898 Orsay, France
[4] Ctr Univ Paris Sud, LURE, F-91898 Orsay, France
[5] Ctr Univ Paris Sud, LPM, F-91405 Orsay, France
关键词
D O I
10.1103/PhysRevB.62.16653
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We study a semiconductor on a close-packed surface of a metal for a system that tends to phase separation. At room temperature, deposition of 1/3 monolayer of Ge on Ag(lll) surprisingly induces a surface alloy forming a p(root 3x root3)R30 degrees superstructure observed in low energy electron diffraction patterns. Yet high-resolution scanning tunneling microscopy images do not exhibit any chemical contrast between Ge and Ag atoms. This is interpreted with ab initio total-energy calculations, which also show that the Ge atoms are located in substitutional sites forming an ordered two-dimensional surface alloy with almost identical local electronic densities for both elements.
引用
收藏
页码:16653 / 16656
页数:4
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