The Role of Surface Energies and Chemical Potential during Nanowire Growth

被引：92

作者：

Algra, Rienk E. ^{[1
,2
,3
]}

Verheijen, Marcel A. ^{[1
,4
]}

Feiner, Lou-Fe ^{[1
,4
]}

Immink, George G. W. ^{[1
]}

van Enckevort, Willem J. P. ^{[3
]}

Vlieg, Elias ^{[3
]}

Bakkers, Erik P. A. M. ^{[1
,4
]}

机构：

[1] Philips Res Labs Eindhoven, NL-5656 AE Eindhoven, Netherlands

[2] Mat Innovat Inst, NL-2628 CD Delft, Netherlands

[3] Radboud Univ Nijmegen, Inst Mol & Mat, NL-6525 AJ Nijmegen, Netherlands

[4] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands

来源：

NANO LETTERS | 2011年 / 11卷 / 03期

关键词：

Nanowire; VLS mechanism; chemical potential; superlattice; twin; gallium phosphide; TWINNING SUPERLATTICES; ZINC-BLENDE; MORPHOLOGY; STACKING;

D O I：

10.1021/nl104267p

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We present an approach to quantitatively determine the magnitudes and the variation of the chemical potential in the droplet (Delta mu), the solid liquid (gamma(SL)) and the liquid-vapor (gamma(LV)) interface energies upon variation of the group III partial pressure during vapor-liquid-solid growth of nanowires. For this study, we use GaP twinning superlattice nanowires. We show that gamma(LV) is the quantity that is most sensitive to the Ga partial pressure (p(Ga)), its dependence on p(Ga) being three to four times as strong as that of gamma(SL) or Delta mu, and that as a consequence the surface energies are as important in determining the twin density as the chemical potential. This unexpected result implies that surfactants could be used during nanowire growth to engineer the nanowire defect structure and crystal structure.

引用

页码：1259 / 1264

页数：6

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