Nature of charged muonium in GaAs with an applied electric field

被引：20

作者：

Schultz, BE ^{[1
]}

Chow, KH

Hitti, B

Salman, Z

Kreitzman, SR

Kiefl, RF

Lichti, RL

机构：

[1] Univ Alberta, Dept Phys, Edmonton, AB T6G 2J1, Canada

[2] TRIUMF, Vancouver, BC V6T 2A3, Canada

[3] Univ British Columbia, Dept Phys & Astron, Vancouver, BC V6T 1Z1, Canada

[4] Texas Tech Univ, Dept Phys, Lubbock, TX 79409 USA

来源：

PHYSICAL REVIEW B | 2005年 / 72卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.72.033201

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have identified the muonium signal that is enhanced by an electric field in semi-insulating GaAs at 10 K. Experiments were conducted with the electric field applied parallel and antiparallel to the incoming muon. For fields in the range approximate to 1-15 kV/cm in both directions the nuclear dipolar broadening of the muon spin precession signal at 1 T is consistent with that of positively charged muonium (i.e., Mu(+)). This is confirmed by muon-nuclear level crossing measurements at +/- 20 kV/cm which show a resonance signal identical to that of isolated Mu(+) seen previously in p-type GaAs. These measurements show by direct spectroscopic means that the electric field of either direction enhances the probability to form isolated Mu(+) in high resistivity GaAs and are in agreement with a model in which the electric field prevents the formation of neutral bond centered muonium.

引用

页数：4

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