Seedless superfill: Copper electrodeposition in trenches with ruthenium barriers

被引：137

作者：

Josell, D

Wheeler, D

Witt, C

Moffat, TP ^{[1
]}

机构：

[1] Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA

[2] Int Sematech, Austin, TX 78741 USA

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2003年 / 6卷 / 10期

关键词：

D O I：

10.1149/1.1605271

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Superfilling of fine trenches by direct copper electrodeposition onto a ruthenium barrier is demonstrated. The ruthenium layer, as well as an adhesion promoting titanium or tantalum layer, was deposited by physical vapor deposition onto patterned silicon dioxide. Copper was deposited from an electrolyte previously shown to yield superconformal feature filling on copper seeded features. The single-step deposition process offers significant processing advantages over conventional damascene processing. (C) 2003 The Electrochemical Society.

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页码：C143 / C145

页数：3

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