XPS characterization and optical properties of Si/SiO2, Si/Al2O3 and Si/MgO co-sputtered films

被引：55

作者：

Koshizaki, N ^{[1
]}

Umehara, H ^{[1
]}

Oyama, T ^{[1
]}

机构：

[1] Natl Inst Mat & Chem Res, Tsukuba, Ibaraki 3058565, Japan

来源：

THIN SOLID FILMS | 1998年 / 325卷 / 1-2期

关键词：

sputtering; silicon; X-ray photoelectron spectroscopy; optical properties;

D O I：

10.1016/S0040-6090(98)00512-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Si/SiO2, Si/Al2O3 and Si/MgO co-sputtered films were prepared by placing 6 or 12 Si plates (5 x 15 mm) on an SiO2, Al2O3 Or MgO target 100 mm in diameter during deposition. X-ray photoelectron spectroscopic (XPS) analysis of these films revealed that the main low valency Si state was SiOx, (0 < x < 2) for Si/SiO2, and Si for Si/Al2O3; and Si/MgO under the same preparation conditions. Although the Si/SiO2 films maintained a homogeneous Si component profile even after heat treatment at 820 degrees C, heat treatment above 700 degrees C for Si/Al2O3 and above 300 degrees C for Si/MgO resulted in an inward diffusion of Si. The Si/SiO2 co-sputtered film had a stronger photoluminescence (PL) intensity at about 1.7 eV than the other two co-sputtered films from Ar ion laser excitation at 514.5 nm. The weak PL observed for Si/Al2O3 and Si/MgO is deduced to be due to the low content of SiOx where electrons and holes recombine and PL is emitted. (C) 1998 Elsevier Science S.A.

引用

页码：130 / 136

页数：7

共 16 条

[1] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].

CANHAM, LT .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048

[2] Fabrication of Si/SiO2 nanocomposite thin films [J].

Chang, ITH ;

Cantor, B ;

Leigh, PA ;

Dobson, PJ .

NANOSTRUCTURED MATERIALS, 1995, 6 (5-8) :835-838

[3] HIGH-RESOLUTION X-RAY PHOTOELECTRON-SPECTROSCOPY AS A PROBE OF LOCAL ATOMIC-STRUCTURE - APPLICATION TO AMORPHOUS SIO2 AND THE SI-SIO2 INTERFACE [J].

GRUNTHANER, FJ ;

GRUNTHANER, PJ ;

VASQUEZ, RP ;

LEWIS, BF ;

MASERJIAN, J ;

MADHUKAR, A .

PHYSICAL REVIEW LETTERS, 1979, 43 (22) :1683-1686

[4] PHOTOLUMINESCENCE OF SI-RICH SIO2-FILMS - SI CLUSTERS AS LUMINESCENT CENTERS [J].

HAYASHI, S ;

NAGAREDA, T ;

KANZAWA, Y ;

YAMAMOTO, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (9A) :3840-3845

[5] QUANTUM SIZE EFFECTS IN GE MICROCRYSTALS EMBEDDED IN SIO2 THIN-FILMS [J].

HAYASHI, S ;

FUJII, M ;

YAMAMOTO, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (08) :L1464-L1466

[6] Optical properties of Si-rich SiO2 films in relation with embedded Si mesoscopic particles [J].

Hayashi, S ;

Yamamoto, K .

JOURNAL OF LUMINESCENCE, 1996, 70 :352-363

[7] MICROSCOPIC STRUCTURE OF THE SIO2/SI INTERFACE [J].

HIMPSEL, FJ ;

MCFEELY, FR ;

TALEBIBRAHIMI, A ;

YARMOFF, JA ;

HOLLINGER, G .

PHYSICAL REVIEW B, 1988, 38 (09) :6084-6096

[8]

Moulder J.F., 1995, HDB XRAY PHOTOELECTR

[9] VISIBLE PHOTOLUMINESCENCE FROM SI MICROCRYSTALS EMBEDDED IN SIO2 GLASS-FILMS [J].

OSAKA, Y ;

TSUNETOMO, K ;

TOYOMURA, F ;

MYOREN, H ;

KOHNO, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (3B) :L365-L366

[10]

PATLI PS, 1996, THIN SOLID FILMS, V272, P29

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