Fabrication of Si/SiO2 nanocomposite thin films

被引：6

作者：

Chang, ITH

Cantor, B

Leigh, PA

Dobson, PJ

机构：

[1] Oxford Centre for Advanced Materials and Composites, University of Oxford, Oxford, Parks Road

来源：

NANOSTRUCTURED MATERIALS | 1995年 / 6卷 / 5-8期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1016/0965-9773(95)00189-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Si-rich SiO2 films were deposited onto Si and quartz substrates by rf co-sputtering, and then annealed under vacuum at temperatures between 500 to 900 degrees C for 1 hour. A combination of high resolution transmission electron microscopy, optical ellipsometry, and UV/VIS and FTIR photospectrometry were used to investigate the microstructures and optical properties of the co-sputtered films before and after annealing. The as-deposited films consisted of a fully amorphous SiOx(1<x<2) structure. After annealing, the films consisted of clusters of crystalline Si with average sizes in the range between 3nm and 8nm embedded in a stoichiometric SiO2 amorphous matrix.

引用

收藏

页码：835 / 838

页数：4

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