ANNEALING CHARACTERISTICS OF SI-RICH SIO2-FILMS

被引：196

作者：

NESBIT, LA

机构：

来源：

关键词：

D O I：

10.1063/1.95842

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：38 / 40

页数：3

共 17 条

[1] CHRISTIAN JW, 1975, THEORY TRANSFORMAT 1, P482
[2] ELECTRICALLY-ALTERABLE MEMORY USING A DUAL ELECTRON INJECTOR STRUCTURE
DIMARIA, DJ
DEMEYER, KM
DONG, DW
[J]. ELECTRON DEVICE LETTERS, 1980, 1 (09): : 179 - 181
[3] CHARGE TRANSPORT AND TRAPPING PHENOMENA IN OFF-STOICHIOMETRIC SILICON DIOXIDE FILMS
DIMARIA, DJ
DONG, DW
FALCONY, C
THEIS, TN
KIRTLEY, JR
TSANG, JC
YOUNG, DR
PESAVENTO, FL
BRORSON, SD
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (10) : 5801 - 5827
[4] HIGH-CURRENT INJECTION INTO SIO2 FROM SI RICH SIO2-FILMS AND EXPERIMENTAL APPLICATIONS
DIMARIA, DJ
DONG, DW
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2722 - 2735
[5] THE PHASE-COMPOSITION OF SIOX FILMS
DVURECHENSKY, AV
EDELMAN, FL
RYAZANTSEV, IA
[J]. THIN SOLID FILMS, 1982, 91 (01) : L55 - L57
[6] ELECTRON-DIFFRACTION STUDY OF AMORPHOUS SILICON-OXIDE FILMS
GEORGE, CF
DANTONIO, P
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 34 (03) : 323 - 334
[7] GIBSON JM, 1981, ELECTRON MICROSCOPY, V1, P310
[8] GOODMAN AM, 1979, I PHYS C SER, V43, P805
[9] CRYSTALLOGRAPHIC STUDY OF SEMI-INSULATING POLYCRYSTALLINE SILICON (SIPOS) DOPED WITH OXYGEN-ATOMS
HAMASAKI, M
ADACHI, T
WAKAYAMA, S
KIKUCHI, M
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3987 - 3992
[10] HARSTEIN A, 1980, APPL PHYS LETT, V36, P836